IPB110N06L G

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Overview of IPB110N06L G

Part NumberIPB110N06L G
ManufacturerInfineon Technologies
DescriptionMOSFET N-CH 60V 78A TO-263
DatasheetsDownload IPB110N06L G Datasheet PDFPDF Icon
Price for IPB110N06L G

Specification of IPB110N06L G

Status
Obsolete
Package
Cut Tape (CT),Digi-Reel®
Supplier
Infineon Technologies
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25C
78A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
11mOhm @ 78A, 10V
Vgs(th) (Max) @ Id
2V @ 94A
Gate Charge (Qg) (Max) @ Vgs
79 nC @ 10 V
Vgs (Max)
-
Input Capacitance (Ciss) (Max) @ Vds
2700 pF @ 30 V
FET Feature
-
Power Dissipation (Max)
-
Operating Temperature
-
Mounting Type
Surface Mount
Supplier Device Package
PG-TO263-3-2
Package / Case
TO-263-3, DPak (2 Leads + Tab), TO-263AB

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